An analytical overview and trend analysis of RowHummer vulnerabilities for various DRAM vendors
Abstract
P
Purpose: to conduct an analytical review of the vulnerability of SSD hard drives and analyze the trends of RowHummer vulnerabilities for different DRAM manufacturers. Make development forecasts.
Findings: Shows a trend toward an increase in the number of RowHummer-vulnerable DRAM chips due to a decrease in the technical process of manufacturing memory blocks.
Practical implications: The discovered vulnerability patterns and root causes of RowHummer can contribute to a better understanding and improvement of SSD memory protection methods in general.
Value: Test data for new memory chips from several DRAM manufacturers is presented. A combined method of analysis based on past developments in the field of protection against RowHummer attacks was also used.
Future research: This research paves the way for future research on the evolution of defenses against RowHummer-type attacks and related third-party memory attacks.
Paper type: analytical.
Downloads
References
Kim, Y.et al. (2014), “Flipping Bits in Memory Without Accessing Them: An Experimental Study of DRAM Disturbance Errors,” in ISCA (pp. 361-372) doi: 10.1109/ISCA.2014.6853210.
Aga, M. T. et al. (2014), “When Good Protections go Bad: Exploiting anti-DoS Measures to Accelerate Rowhammer Attacks,” in HOST (pp. 8-13), doi: 10.1109/HST.2017.7951730
Chandrasekar, K. et al. (2016), “Exploiting Expendable Process-margins in DRAMs for Run-time Performance Optimization,” in DATE (pp. 1-6), doi: 10.7873/DATE.2014.186.
Seaborn, M. and T. Dullien (2015), “Exploiting the DRAM Rowhammer Bug to Gain Kernel Privileges,”. Retrieved from: http://googleprojectzero.blogspot.com.tr/2015/03/exploitingdram-rowhammer-bug-to-gain.html.
Chao, M.-T. et al. (2009), “Fault Models for Embedded-DRAM Macros,” in DAC (pp. 714-719), https://doi.org/10.1145/1629911.1630097
Al-Ars, Z. et al. (2006), “DRAM-Specific Space of Memory Tests,” in ITC, https://doi.org/10.1109/TEST.2006.297701
Chia, P.-F. et al. (2010) “New DRAM HCI Qualification Method Emphasizing on Repeated Memory Access”. In Integrated Reliability Workshop
Liu, J. et al. (2013), “An Experimental Study of Data Retention Behavior in DRAM Devices: Implications for Retention Time Profiling Mechanisms,” ISCA, https://doi.org/10.1145/2485922.2485928
Abstract views: 639 PDF Downloads: 541
Copyright (c) 2024 Valentyn Mazurok, Vladimir Lutsenko

This work is licensed under a Creative Commons Attribution 4.0 International License.





