An analytical overview and trend analysis of RowHummer vulnerabilities for various DRAM vendors
Abstract
P
Purpose: to conduct an analytical review of the vulnerability of SSD hard drives and analyze the trends of RowHummer vulnerabilities for different DRAM manufacturers. Make development forecasts.
Findings: Shows a trend toward an increase in the number of RowHummer-vulnerable DRAM chips due to a decrease in the technical process of manufacturing memory blocks.
Practical implications: The discovered vulnerability patterns and root causes of RowHummer can contribute to a better understanding and improvement of SSD memory protection methods in general.
Value: Test data for new memory chips from several DRAM manufacturers is presented. A combined method of analysis based on past developments in the field of protection against RowHummer attacks was also used.
Future research: This research paves the way for future research on the evolution of defenses against RowHummer-type attacks and related third-party memory attacks.
Paper type: analytical.
Downloads
References
Kim, Y.et al. (2014), “Flipping Bits in Memory Without Accessing Them: An Experimental Study of DRAM Disturbance Errors,” in ISCA (pp. 361-372) doi: 10.1109/ISCA.2014.6853210.
Aga, M. T. et al. (2014), “When Good Protections go Bad: Exploiting anti-DoS Measures to Accelerate Rowhammer Attacks,” in HOST (pp. 8-13), doi: 10.1109/HST.2017.7951730
Chandrasekar, K. et al. (2016), “Exploiting Expendable Process-margins in DRAMs for Run-time Performance Optimization,” in DATE (pp. 1-6), doi: 10.7873/DATE.2014.186.
Seaborn, M. and T. Dullien (2015), “Exploiting the DRAM Rowhammer Bug to Gain Kernel Privileges,”. Retrieved from: http://googleprojectzero.blogspot.com.tr/2015/03/exploitingdram-rowhammer-bug-to-gain.html.
Chao, M.-T. et al. (2009), “Fault Models for Embedded-DRAM Macros,” in DAC (pp. 714-719), https://doi.org/10.1145/1629911.1630097
Al-Ars, Z. et al. (2006), “DRAM-Specific Space of Memory Tests,” in ITC, https://doi.org/10.1109/TEST.2006.297701
Chia, P.-F. et al. (2010) “New DRAM HCI Qualification Method Emphasizing on Repeated Memory Access”. In Integrated Reliability Workshop
Liu, J. et al. (2013), “An Experimental Study of Data Retention Behavior in DRAM Devices: Implications for Retention Time Profiling Mechanisms,” ISCA, https://doi.org/10.1145/2485922.2485928
Abstract views: 119 PDF Downloads: 58
Copyright (c) 2024 Valentyn Mazurok, Vladimir Lutsenko
This work is licensed under a Creative Commons Attribution 4.0 International License.
The authors agree with the following conditions:
1. Authors retain copyright and grant the journal right of first publication (Download agreement) with the work simultaneously licensed under a Creative Commons Attribution License that allows others to share the work with an acknowledgment of the work's authorship and initial publication in this journal.
2. Authors have the right to complete individual additional agreements for the non-exclusive spreading of the journal’s published version of the work (for example, to post work in the electronic repository of the institution or to publish it as part of a monograph), with the reference to the first publication of the work in this journal.
3. Journal’s politics allows and encourages the placement on the Internet (for example, in the repositories of institutions, personal websites, SSRN, ResearchGate, MPRA, SSOAR, etc.) manuscript of the work by the authors, before and during the process of viewing it by this journal, because it can lead to a productive research discussion and positively affect the efficiency and dynamics of citing the published work (see The Effect of Open Access).
